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Porous Silicon Platform


Application areas

Bondarenko V.P. Yakovtseva V.A. Optoelectronic applications of porous silicon. Properties of Porous Silicon (1997); 356-363.

Canham L.T. Biomedical applications of porous silicon. Properties of Porous Silicon (1997); 371-376.

Lang. W. Micromaching applications of porous silicon. Properties of Porous Silicon (1997); 377-383.

Thonissen M. Kruger M. Lerondel G. Romestain R. Optical applications of porous silicon. Properties of Porous Silicon (1997); 349-355.


Biocompatibility & toxicology of porous silicon

Adler AJ, Etzion Z, Berlyne GM. Uptake, distribution, and excretion of 31silicon in normal rats. 1986. Department of Medicine, Brooklyn Veterans Administration Medical Center, Brooklyn, New York. - Internal data on file

Bissé E, Epting T, Beil A, Lindinger G, Lang H, Wieland H. Reference values for serum silicon in adults. 2004. Department of Clinical Chemistry, University Hospital Freiburg, Freiburg, Germany. - Internal data on file

Bodwitch AP, Waters K, Gale H, Rice P, Scott EAM, Canham LT, Reeves CL, Loni A, Cox TI. In-vivo assessment of tissue compatibility and calcification of bulk and porous silicon. 1999. Biomedical Sciences Dept. CBD, DERA Porton Down, Wiltshire, UK & DERA Malvern, Malvern, Worc., UK. - Internal data on file

Canham LT. Bioactive silicon structure fabrication through nanoetching techniques. 1995. Defense Research Agency (DERA), Malvern, Worcs., UK. - Internal data on file

Canham LT, Reeves CL, Wallis DJ, Newey NP, Houlton MR, Sapsford GJ, Godfrey RE, Loni A, Simon J, Cox T, Ward MCL. Silicon as an active biomaterial. 1997. DERA Malvern, Worcestershire, UK. - Internal data on file

Jay T, Canham LT, Heald K, Reeves CL, Downing R. Autoclaving of porous silicon within a hospital environment: potential benefits and problems. 2000. Worcester Royal Infirmary NHS Trust, Worcester, UK & DERA, Malvern, Worcester, UK. - Internal data on file

Popplewell JF, King SJ, Day JP, Ackrill P, Fifield LK, Cresswell RG, di Tada ML, Liu K. Kinetics of uptake and elimination of silicic acid by a human subject: A novel application of 32Si and accelerator mass spectrometry. 1997. Department of Chemistry, University of Manchester, Manchester, UK & Renal Unit, University Hospital of South Manchester, Withington, Manchester, UK & Department of Nuclear Physics, Australian National University, Canberra, ACT, Australia. - Internal data on file

Rosengren A, Wallman L, Bengtsson M, Laurell T, Danielsen N, Bjursten LM. Tissue reactions to porous silicon: a comparative biomaterial study. Phys Stat Sol 2000;(a)182:527-31.

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Biochemical interactions and applications of porous silicon

Arwin H. Gavutis M. Gustafsson J. Schultzberg M. Zangooie S. Tengvall P. Protein Adsorption in Thin Porous Silicon Layers. Phys Stat Sol 2000;(a) 182, 1:515-520.

Bengtsson M. Ekstrom S. Drott J. Collins A. Csoregi E. Marko-Varga G. Laurell T. Applications of Microstructured Porous Silicon as a Biocatalytic Surface (invited). Phys Stat Sol 2000;(a) 182, 1:495-504.

Canham L.T. Stewart M.P. Buriak J.M. Reeves C.L. Anderson M. Squire E.K. Allcock P. Snow P.A. Derivatized Porous Silicon Mirrors: Implantable Optical Components with Slow Resorbability. Phys Stat Sol 2000;(a) 182, 1:521-526.

Chan S, Fauchet PM, Li Y, Rothberg LJ, Miller BL. Porous silicon microcavities for biosensing applications. Phys Stat Sol 2000;(a)182:541-46.

Hu L, Xu S, Pan C, Zou H, Jiang J. Preparation of a biochip on porous silicon and application for label-free detection of small molecule-protein interactions. Rapid Comm Mass Spect 2007;21(7):1277-81.

Karlsson LM, Tengvall P, Lundström I, Arwin H. Adsorption of human serum albumin in porous silicon gradients. Phys Stat Sol 2002;(a)197, 2:326-30.

Mayne AH, Bayliss SC, Barr P, Tobin M, Buckberry LD. Biologically interfaced porous silicon devices. Phys Stat Sol 2000;(a)182:505-13.

Rosengren A. Wallman L. Bengtsson M. Laurell Th. Danielsen N. Bjursten L.M. Tissue Reactions to Porous Silicon: A Comparative Biomaterial Study. Phys Stat Sol 2000;(a) 182, 1: 527-532.

Tinsley-Brown AM, Canham LT, Hollings M, Anderson MH, Reeves CL, Cox, TI, Nicklin S, Squirrell DJ, Perkins E, Hutchinson A, Sailor M J, Wun A. Tuning the pore size and surface chemistry of porous silicon for immunoassays. Phys Stat Sol 2000; (a)182:555-560

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Biodegradation of porous silicon

Anderson SHC, Elliott H, Wallis DJm Canham LT, Powell JJ. Dissolution of different forms of partially porous silicon wafers under simulated physiological conditions. Phys Stat Sol 2002;(a)197, 2:331-35.

Boukherroub R, Wayner D, Lockwood DJ, Canham LT. Passivated luminescent porous silicon. 2001. Steacie Institute for Molecular Sciences, Institute for Microstructural Sciences National Research Council, Ottawa, Ontario, Canada & DERA, Malvern, Worcestershire, UK.- Internal data on file

Buriak, JM, Stewart MP, Geders TW, Allen MJ, Choi HC, Smith J, Raftery D, Canham LT. Lewis acid mediated hydrosilyation on porous silicon surfaces. 1999. 1393 Brown Laboratories, Purdue University, West Lafayette, Indiana & Defense Evaluation Research Agency (DERA) Malvern, Worcestershire, UK.- Internal data on file

Canham LT, Reeves CL, King DO, Branfield, PJ, Crabb JG, Ward M. Bioactive polycrystalline silicon. 1996. Defense Evaluation Research Agency (DERA), Malvern, Worcestershire (UK)- Internal data on file

Canham LT, Reeves CL, Newey JP, Houlton MR, Cox TI, Buriak JM, Stewart MP. Derivatized mesoporous silicon with dramatically improved stability in simulated human blood plasma. 1996. Defense Evaluation Research Agency (DERA), Malvern, Worcestershire, UK & Department of Chemistry, Purdue University, West Lafayette, Indiana, USA.- Internal data on file

Cullis AG, Canham LT, Calcott DJ. The structural and luminescence properties of porous silicon. 1997. University of Sheffield, Sheffield, UK & DERA Malvern, Malvern, Worcs, UK.- Internal data on file

Simons AJ, Cox TI, Loni A, Canham LT, Blacker R. Investigation of the mechanisms controlling the stability of a porous silicon electroluminescent device. 1997. Defense Research Agency, Great Malvern, Worcestershire, UK.- Internal data on file

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Chemical composition

Canham L.T. Chemical composition of "aged" porous silicon. Properties of Porous Silicon (1997); 154-157.

Canham L.T. Chemical composition of intentionally oxidized porous silicon. Properties of Porous Silicon (1997); 158-162.

Grosman A. Ortega C. Chemical composition of "fresh" porous silicon. Properties of Porous Silicon (1997); 145-153.

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Derivatization, stabilization and oxidation

Boukherroub R. Morin S. Wayner D.D.M. Lockwood D.J. Thermal Route for Chemical Modification and Pholuminescence Stabilization of Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:117-122.

Ehara T. Arai T. Defect Structure of Nitrogen Plasma Treated Porous Silicon Studied Using Electron Paramagnetic Resonance. Phys Stat Sol 2000;(a) 182, 1:127-132.

Kimoto K. Arai T. Photoluminescence of Rapid Thermal Treated Porous Si in Nitrogen Atmosphere. Phys Stat Sol 2000;(a) 182, 1:133-138.

Salonen J. Lehto V.-P. Bjorkqvist M. Laine E. Niinisto L. Studies of Thermally-Carbonized Porous Silicon Surfaces. Phys Stat Sol 2000;(a) 182, 1:123-126.

Stewart M.P. Robins E.G. Geders T.W. Allen M.J. Cheul Choi H. Buriak J.M. Three Methods for Stabilization and Functionalization of Porous Silicon Surfaces via Hydrosilylation and Electrografting Reactions (invited). Phys Stat Sol 2000;(a) 182, 1:109-116.

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Doping, impregnation and epitaxy

Astrova E.V. Voronkov V.B. Grekhov I.V. Nashchekin A.V. Tkachenko A.G. Deep Diffusion Doping of Macroporous Silicon. Phys Stat Sol 2000;(a) 182, 1:145-150.

Baranauskas V. Peterlevitz A.C. Li B.B. Tosin M.C. Ceragioli H.J. Durrant S.F. The Growth of Diamond Films on Laser-Etched Porous Silicon. Phys Stat Sol 2000;(a) 182, 1: 181-188.

Coulthard I. Sammynaiken R. Naftel S.J. ZhangP. Sham T.K. Porous Silicon: A Template for the Preparation of Nanophase Metals and Bimetallic Aggregates. Phys Stat Sol 2000;(a) 182, 1: 157-162.

Gokarna A. Bhoraskar S.V. Pavaskar N.R. Sathaye S.D. Optoelectronic Characterisation of Porous Silicon/CdS and ZnS Systems. Phys Stat Sol 2000;(a) 182, 1: 175-180.

Konenkamp R. Ernst K. Fischer Ch.-H. Lux-Steiner M.C. Rost C. Semiconductor Growth and Junction Formation within Nano-Porous Oxides. Phys Stat Sol 2000;(a) 182, 1: 151-156.

Missaoui A. Saadoun M. Ezzaoui H. Bessais B. Boufaden T. Rebey A. El Jani B. Growth of GaN Films on Porous Silicon by MOVPE. Phys Stat Sol 2000;(a) 182, 1: 189-194.

Nguyen T.-P. Joubert P. Destruel P. Rendu Ph. Le. Lakehal M. Study of the Porous Silicon-Poly(p Phenylen-Vinylene) Systems. Phys Stat Sol 2000;(a) 182, 1: 169-174.

Timoshenko V.Yu. Lysenko V. Dittrich Th. Koch F. Electrical Conductivity of Meso-Porous Si: Effects of the Condensation of Polar Liquids. Phys Stat Sol 2000;(a) 182, 1: 163-168.

Yakovtseva V. Vorozov N. Dolgyi L. Levchenko V. Postnova L. V. Balucani M. Bondarenko V. Lamedica G. Ferrara V. Ferrari A. Porous Silicon: A Buffer Layer for PbS Heteroepitax Phys Stat Sol 2000;(a) 182, 1:195-200.

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Electrical properties

Ben-Chorin M. Resistivity of porous silicon. Properties of Porous Silicon (1997); 165-175.

Cox T.I. Porous silicon layer capacitance. Properties of Porous Silicon (1997); 185-191.

Koshida N. Photoconductivity of porous silicon. Properties of Porous Silicon (1997); 311-316.

Simons A.J. Carrier mobility in porous silicon. Properties of Porous Silicon (1997); 176-184.

Simons A.J. Porous silicon diodes. Properties of Porous Silicon (1997); 192-200.

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Electrical and photoelectrical transport

Dittrich Th, Duzhko V. Photovoltage in free-standing mesoporous silicon layers. Phys Stat Sol 2002; (a) 197, 2: 107-12

Garrone E, Borini S, Rivolo P, Boarino L, Goebaldo F, Amato G. Porous silicon in NO2: A chemisorption mechanism for enhanced electrical conductivity. Phys Stat Sol 2002;(a)197, 2:103-106

Reshotko M R, Sa'ar A, Balberg I. The electrical transport in luminescent porous silicon. Phys Stat Sol 2002; (a) 197, 2: 113-16

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Electrochemistry and pore formation

Carstensen J. Christophersen M. Hasse G. Foll H. Parameter Dependence of Pore Formation in Silicon within a Model of Local Current Bursts. Phys Stat Sol 2000;(a) 182, 1:63-70.

Christophersen M, Carstensen J, Foll H. Macropore Formation on Highly Doped n-Type Silicon Phys Stat Sol 2000;(a) 182, 1:45-50.

Fellah S, Gabouze N, Ozanam F, Chazalviel J.-N, Beldjilali K. Pit Formation on p-Si during Hydrogen Evolution in HF Electrolyte Phys Stat Sol 2000;(a) 182, 1:31-36.

Foll H, Carstensen J, Christophersen M, Hasse G. A New View of Silicon Electrochemistry. Phys Stat Sol 2000;(a) 182, 1:7-16.

Hasse G, Christopherson M, Carstensen J, Foll H. New Insights into Si Electrochemistry and Pore Growth by Transient Measurements and Impedance Spectroscopy. Phys Stat Sol 2000;(a) 182, 1:23-30.

Lust S, Levy-Clement C. Macropore Formation on Medium Doped p-Type Silicon. Phys Stat Sol 2000;(a) 182, 1:17-22.

Parkhutik V, Matveeva E. Electrochemical Impedance Characterization of Transient Effects in Anodic Oxidation of Silicon. Phys Stat Sol 2000;(a) 182, 1:37-44.

Schmuki P, Santinacci L, Djenizian T, Lockwood D.J. Pore formation on n-InP Phys Stat Sol 2000;(a) 182, 1:51-62.

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Formation and characterization of porous silicon

Allongue P. Porous silicon formation mechanism. Properties of Porous Silicon (1997); 3-11.

Biasini M. Ferro G. Monge M.A. Di Francia G. La Ferrara V. Study of the Structure of Porous Silicon via Positron Annihilation Experiments. Phys Stat Sol 2000;(a) 182, 1:279-284.

Coffer J.L. Porous silicon formation by stain etching. Properties of Porous Silicon (1997); 23-29.

Guerrero-Lemus R, Ben-Hander FA, Fierro J L G, Hernandez-Rodriguez C, Martinez-Duart JM. Compositional and photoluminescent properties of anodically and stain etched porous silicon. Phys Stat Sol 2002; (a) 197, 2:137-43.

Halimaoui A. Porous silicon formation by anodisaton. Properties of Porous Silicon (1997); 12-22.

Hamm D, Sakka T, Ogata YH. Etching of porous silicon in basic solution. Phys Stat Sol 2002; (a) 197, 2;175-79.

Li W. Andrienko I. Haneman D. High Resolution Surface Structure of Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:267-270.

Manatos S. Agullo-Rueda F. Moreno J.D. Ben-Hander F. Guerrero-Lemus R. Martinez-Duart J.M. Determination of Stress in Porous Silicon by Micro-Raman Spectroscopy. Phys Stat Sol 2000;(a) 182, 1:245-248.

Nassiopoulos A.G. Local formation and patterning of porous silicon. Properties of Porous Silicon (1997); 77-80.

Paszti F. Battistig G. Ion Beam Characterisation and Modification of Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:271-278.

Salonen J. Bjorkqvist M. Laine E. Niinisto L. Effects of Fabrication Parameters on Porous p+ -Type Silicon Morphology. Phys Stat Sol 2000;(a) 182, 1:249-254.

Starkov V.V. Starostina E.A. Vyatkin A.F. Volkov V.T. Dielectric Porous Layer Formation in Si and Si/Ge by Local Stain Etching. Phys Stat Sol 2000;(a) 182, 1:93-96.

Wllner A. Koker L. Kolasinski K.W. Aindow M. Palmer R.E. The Effect of Etchant Composition on Film Structure during Laser-Assisted Porous Si Growth. Phys Stat Sol 2000;(a) 182, 1:87-92.

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Modeling of pore morphology and skeleton structure

Cullis A.G. Structure and crystallinity of porous silicon. Properties of Porous Silicon (1997); 99-105.

Canham L.T. Skeleton size distribution in porous silicon. Properties of Porous Silicon (1997); 106-111.

Daldosso N, Dalba G, Fornasini P, Grisenti R, Rocca F. Size and surface effects in porous silicon studied by X-ray absorption spectroscopy. Phys Stat Sol 2002;(a)197, 2:98-102.

Metzger T.H. Binder M. Peisl J. Structure and Morphology of porous silicon. Properties of Porous Silicon (1997); 112-117.

Müller G, Nerding M, Ott Nm Strunk HP, Brendel R. Sintering of porous silicon. Phys Stat Sol 2002;(a)197, 2:83-87.

Ott N, Nerding M, Müller G, Brendel R, Strunk HP. Structural changes in porous silicon during annealing. Phys Stat Sol 2002;(a)197, 2:93-97.

Parkhutik V, Collins B, Sailor M, Vstovsky G, Timashev S. Analysis of morphology of porous silicon layers using Flicker noise spectrometry. Phys Stat Sol 2002;(a)197, 2:88-92.

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Mechanical, thermal properties and processing

Bellet D. Elastic properties of porous silicon. Properties of Porous Silicon (1997); 127-131.

Duttagupta S.P. Fauchet P.M. Microhardness of porous silicon. Properties of Porous Silicon (1997); 132-137.

Lang W. Thermal conductivity of porous silicon. Properties of Porous Silicon (1997); 138-142.

Manotas. S. Agullo-Rueda F. Moreno J.D. Ben-Hander F. Guerrero-Lemus R. Martinez-Duart J.M. Laser Heating in Porous Silicon Studied by Micro-Raman Spectroscopy. Phys Stat Sol 2000;(a) 182, 1:331-334.

Muller G. Brendel R. Simulated Annealing of Porous Silion. Phys Stat Sol 2000;(a) 182, 1:313-318.

Nassiopoulou A.G. Kaltsas G. Porous silicon as an Effective Material for Thermal Isolation on Bulk Crystalline Silicon. Phys Stat Sol 2000;(a) 182, 1:307-312.

Timoshenko V.Yu. Dittrich Th. Sieber I. Rappich J. Kamenev B.V. Kashkarov P.K. Laser-Induced Melting of Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:325-330.

Zhou Y. Snow P.A. Rusell P.St.J. The Effect of Thermal Processing on Multilayer Porous Silicon Microcavity. Phys Stat Sol 2000;(a) 182, 1:319-324.

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Novel applications

Christophersen M. Merz P. Quenzer J. Carstensen J. Foll H. A New Way to Silicon Microstructuring with Electrochemical Etching. Phys Stat Sol 2000;(a) 182, 1: 561-566.

Ueno K. Koshida N. Optical Accessibility of Light-Emissive Nanosilicon Memory. Phys Stat Sol 2000;(a) 182, 1: 579-584.

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Optical constants

Koshida N. Dielectric constant of porous silicon. Properties of Porous Silicon (1997); 234-237.

Lerondel G. Romestain R. Reflection and light scattering in porous silicon. Properties of Porous Silicon (1997); 241-246.

Matsumoto T. Masumoto Y. Nonlinear optical properties of porous silicon. Properties of Porous Silicon (1997); 238-240.

Theiss W. Hilbrich S. Refractive index of porous silicon. Properties of Porous Silicon (1997); 223-228.

von Behren J. Fauchet P.M. Absorption coefficient of porous silicon. Properties of Porous Silicon (1997); 229-233.

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Porosity

Canham L.T. Pore type, shape, size, volume and surgace area in porous silicon. Properties of Porous Silicon (1997); 83-88.

Herino R. Pore size distribution in porous silicon. Properties of Porous Silicon (1997); 89-96.

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Photoluminescence and electroluminescence

Agarwal V, Rubo YG, del R�o JA. Effect of the electric field on the luminescence of self-supporting porous silicon. Phys Stat Sol 2002;(a)197, 2:345-49

Agarwal V. Sehrawat K. Mathur P.C. Mehra R.M. Analysis of the Shape of PL Spectra and Its Temperature Dependence in Self-Supporting Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:385-388.

Amato G. Boarino L. Borini S. Rossi A.M. Hybrid Approach toPorous Silicon Integrated Waveguides. Phys Stat Sol 2000;(a) 182, 1:425-430.

Baranauskas V. Tosin M.C. Ceragioli H.J. Zhao J.G. Peterlevitz A.C. Durrant S.F. Photoluminescent Properties of Porous Carbon Films Pyrolised on Silicon. Phys Stat Sol 2000;(a) 182, 1:395-400.

Bsiesy A. Electroluminescence from porous silicon using liquid contacts. Properties of Porous Silicon (1997); 283-289.

Canham L.T. Visible photoluminescence from porous silicon. Properties of Porous Silicon (1997); 249-255.

Chernoutsan K. Dneprovskii V. Shaligina O. Zhukov E. Photoluminescnece of Erbium, Zinc and Copper doped Porous Silicon and a Phenomenological Model for the Metal Electrodeposition. Phys Stat Sol 2000;(a) 182, 1:353-358.

Cox T.I. Electroluminescence from porous silicon using solid state contacts. Properties of Porous Silicon (1997); 290-310.

Diener J. Kovalev D. Polisski G. Koch F. Dielectric Effects in the Photoluminescence from Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:341-346.

El-Bahar A, Stolyarova S, Chack A, Weil R, Beserman R, Nemirovsky Y. Ultrasound treatment for porous silicon photoluminescence enhancement. Phys Stat Sol 2002;(a)197, 2:340-44

Fellah S. Ozanam F. Gabouze N. Chazalviel J.-N. Porous Silicon in Solvents: Constant-Lifetime PL Quenching and Confirmation of Dielectric Effects. Phys Stat Sol 2000;(a) 182, 1:367-372.

Gaburro Z. Bellutti P. Pavesi L. CMOS Fabrication of a Light Emitting Diode Based on Silicon/Porous Silicon Heterojunction. Phys Stat Sol 2000;(a) 182, 1:407-412.

Givant A. Shappir J. Sa'ar A. Porous Silicon on Insulator: A New Approach to Fabricate Porous Silicon Based Optoelectronic Devices. Phys Stat Sol 2000;(a) 182, 1:419-424.

Kooij E.S. Kelly J.J. Chemiluminescence form porous silicon. Properties of Porous Silicon (1997); 276-280.

Kunzner N. Kovalev D. Diener J. Heckler H. Polisski G. Koch F. Joint Density of Electronic States in Silicon Nanocrystals. Phys Stat Sol 2000;(a) 182, 1:379-384.

Lopez H.A. Fauchet P.M. 1.54µm Electroluminescence from Erbium-Doped Porous Silicon Composites for Photonic Applications. Phys Stat Sol 2000;(a) 182, 1:413-418.

Meng J.X. Li T.K. Wong W.K. Cheah K.W. Doping of Porous Silicon with Terbium Organic Complex. Phys Stat Sol 2000;(a) 182, 1:363-366.

Misiuk A. Surma H.B. Bak-Misiuk J. Romano-Rodriguez A. Wnuk A. Brzozowski A. Bachrouri A. Barcz A. Photoluminescence of Porous Silicon Prepared from Pressure Treated Cz-Si. Phys Stat Sol 2000;(a) 182, 1:401-406.

Naftel S.J. Coulthard I. Jiang D.T. Sham T.K. Yates B.W. Tan K.H. The Role of Oxygen in the Photoluminescence of Porous Silicon: Some Recent Observations. Phys Stat Sol 2000;(a) 182, 1:373-378.

Nakajima Y, Toyama H, Kojima A, Koshida N. A solid-state light-emitting device based on ballistic electron excitation using and inorganic material as a fluorescent film. Phys Stat Sol 2003;(a)197, 2:316-20.2;(a)197, 2:321-25.

Qin G.G. Lin J. Ultraviolet photoluminescence form porous silicon. Properties of Porous Silicon (1997); 264-269.

Qin G.G. Qin G. Multiple Mechanism Model for Photoluminescence from Oxidized Porous Si. Phys Stat Sol 2000;(a) 182, 1:335-340.

Sauer R. Near infrared photoluminescence from porous silicon. Properties of Porous Silicon (1997); 256-263.

Wang S.T. Xu Dongsheng. Guo Guolin. Qin G.G. Photoluminescence and Raman Spectroscopy Study on Oxidized Free-Standing Porous Si. Phys Stat Sol 2000;(a) 182, 1:359-362.

Williams G.M. Cathodoluminescence properties of porous silicon. Properties of Porous Silicon (1997); 270-275.

Xu Dongsheng. Guolin Guo. Gui Linlin. Youqi Tang. Zhang B.R. Qin G.G. Correlation between the H+ Concentration in the Electrolyte and the Photoluminescence of Porous Silicon. Phys Stat Sol 2000;(a) 182, 1:389-394.

Zianni X, Nassiopoulou AG. Multi-component behavior of the photoluminescence lifetime in porous Si. Phys Stat Sol 2002;(a)197, 2:311-15.

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Properties of porous silicon

Canham L.T. DERA, Malvern, UK. Properties of Porous Silicon. (1997); EMIS Datareviews Series No. 18, INSPEC, UK.

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Waveguiding

Charrier J, Guendouz M, Haji L, Joubert P. Porosity gradient resulting from localized formation of porous silicon: The effect of waveguiding. Phys Stat Sol 2000; (a)182: 431-36

Oton CJ, Dal Negro L, Gaburro Z, Pavesi L, Johnson P J, Lagendijk A, Wiersma DS. Light propagation in one-dimensional porous silicon complex systems. Phys Stat Sol 2002; (a)197, 2:298-302

Rossi AM, Borini S, Boarino L, Amato G. Lateral structuring of porous silicon: application to waveguides. Phys Stat Sol 2002;(a)197, 2:284-87

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Bibliography

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